Interface Studies of the Mos-structure by Transfer-admittance Measurements
نویسنده
چکیده
The transfer-admittance of n and p-channel MOS transistors has been measured under the condition of a uniform channel. These MOS transistors all showed a measurable “slow interface state drift” <O.l-0.2V. The transfer-susceptance has been found to show a significant peak value in moderate inversion. Over the entire moderate and strong inversion region the transfer-susceptance remains constant as a function of the measurement frequency o between 1.6 Hz and 2 x IO” Hz, while the transfer-conductance varies almost like In o. Furthermore the transfer-susceptance shows a linear relationship with the variation of the transfer-conductance per frequency decade. The paper shows that these phenomena can be well explained by assuming a tunneling of channel charge carriers into electron states in the oxide. Also the temperature behaviour of the transfer-admittance does not seem to be in conflict with this tunnel model. More than the CV measuring method the measurement of the transfer-admittance allows an investigation of the interaction between mobile inversion layer charge carriers, and interface states in the condition of moderate inversion (5 X lo”-5 x 10” electrons cme2). The measuring method might therefore find application in the investigation of charge trapping in CCD devices. As a pertinent result the density of oxide states having time constants between 6 x 10-l set and 1.6 x lo-’ set appears to increase to values of about 10” per cm*V as the interface state energy approaches the conduction and valence band edge energies within a distance of =70 meV.
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